公开(公告)号：US20160079441A1

公开(公告)日：2016-03-17

申请号：US14851409

申请日：2015-09-11

Applicant: ABB Technology AG

Inventor： Jaroslav Homola ,  Jiri Podzemsky ,  Ladislav Radvan ,  llja Muller

IPC: H01L29/868 ,  H01L21/304 ,  H01L21/223 ,  H01L29/66 ,  H01L29/167

CPC classification number: H01L29/868 ,  H01L21/223 ,  H01L21/304 ,  H01L29/167 ,  H01L29/32 ,  H01L29/6609

Abstract: High frequency power diode including a semiconductor wafer having first and second main sides, a first layer of a first conductivity type formed on the first main side, a second layer of a second conductivity type formed on the second main side and a third layer of the second conductivity type formed between the first layer and the second layer. The first layer has a dopant concentration decreasing from 1019 cm−3 or more adjacent to the first main side of the wafer to 1.5.1015 cm−3 or less at an interface of the first layer with the third layer. The second layer has a dopant concentration decreasing from 1019 cm−3 or more adjacent to the second main side of the wafer to 1.5.1015 cm−3 at an interface of the second layer with the third layer and the third layer has a dopant concentration of 1.5.1015 cm−3 or less.

Abstract translation: 高频功率二极管包括具有第一和第二主侧面的半导体晶片，形成在第一主侧的第一导电类型的第一层，形成在第二主侧的第二导电类型的第二层和第二层 形成在第一层和第二层之间的第二导电类型。 第一层在第一层与第三层的界面处具有从晶片的第一主侧相邻的1019cm-3或更大的掺杂剂浓度降低至1.5.1015cm-3或更小的掺杂浓度。 第二层在第二层与第三层的界面处具有从晶片的第二主侧相邻的1019cm-3或更大的掺杂剂浓度降低至1.5.1015cm-3，并且第三层具有掺杂剂浓度 为1.5×10 15 cm -3以下。