公开(公告)号：US20240094756A1

公开(公告)日：2024-03-21

申请号：US18506621

申请日：2023-11-10

申请人： ABLIC INC.

发明人： Takeshi KOYAMA ,  Hisashi Hasegawa ,  Shinjiro Kato ,  Kohei Kawabata

IPC分类号： G05F3/24 ,  H01L27/088 ,  H01L29/49

CPC分类号： G05F3/24 ,  H01L27/0883 ,  H01L29/49 ,  H01L29/4908

摘要： Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.

公开(公告)号：US11587869B2

公开(公告)日：2023-02-21

申请号：US17082971

申请日：2020-10-28

申请人： ABLIC Inc.

发明人： Hisashi Hasegawa ,  Takeshi Koyama ,  Shinjiro Kato ,  Kohei Kawabata

IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L27/088

摘要： A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged at least partially on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal or metallic film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.

公开(公告)号：US10297562B2

公开(公告)日：2019-05-21

申请号：US15915992

申请日：2018-03-08

申请人： ABLIC Inc.

发明人： Kaku Igarashi ,  Shinjiro Kato ,  Hisashi Hasegawa ,  Masaru Akino ,  Yukihiro Imura

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L21/02 ,  H01L23/31

摘要： Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.