公开(公告)号：US20230299072A1

公开(公告)日：2023-09-21

申请号：US18184629

申请日：2023-03-15

申请人： ABLIC Inc.

发明人： Kazuhiro TSUMURA

IPC分类号： H01L27/02

CPC分类号： H01L27/0255 ,  H01L27/0274

摘要： An ESD protection circuit is connected between a VDD terminal and a Vss terminal and is connected in parallel with an internal circuit which operates at an operating voltage and is damaged at a damage voltage or higher to protect the internal circuit from electrostatic discharge. The ESD protection circuit includes ESD protection elements connected in series. The ESD protection elements are transistors, diode elements, or a combination thereof. A sum of current-voltage characteristics of the ESD protection elements at a voltage higher than the operating voltage is higher than the operating voltage and lower than the damage voltage, until reaching a discharge current value or higher capable of protecting the internal circuit.

公开(公告)号：US20180284821A1

公开(公告)日：2018-10-04

申请号：US15938316

申请日：2018-03-28

申请人： ABLIC Inc.

发明人： Kaoru SAKAGUCHI ,  Kazuhiro TSUMURA

IPC分类号： G05F1/567 ,  G05F1/575

CPC分类号： G05F1/567 ,  G01R31/2855 ,  G01R31/2874 ,  G01R31/3004 ,  G05F1/575 ,  H02H5/044

摘要： To provide a voltage regulator capable of switching a voltage of an output terminal from an internal voltage to an external voltage while suppressing an increase in circuit scale. The voltage regulator includes a voltage output circuit configured to generate a constant internal voltage lower than an external voltage applied to an input terminal from the external voltage and supplying the constant internal voltage to an output terminal, a temperature sensing circuit configured to decrease an output voltage of an output node thereof according to a rise in temperature, an overheat detection circuit connected to the output node of the temperature sensing circuit and a test terminal, and a voltage detection circuit connected to the output node of the temperature sensing circuit and the test terminal.

公开(公告)号：US20230317836A1

公开(公告)日：2023-10-05

申请号：US18185400

申请日：2023-03-17

申请人： ABLIC Inc.

发明人： Kazuhiro TSUMURA

IPC分类号： H01L29/735 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/735 ,  H01L29/1008 ,  H01L29/0821 ,  H01L29/0808

摘要： A bipolar transistor is capable of reducing variations in electrical characteristics. A bipolar transistor 100 includes: a collector region 150 which is a predetermined region in a P-type semiconductor substrate 110; a base region 140 which is formed within the collector region 150 and is an N-type well region; a polysilicon 130 formed on the base region 140 via an insulating film 131 and having an outer periphery, as viewed in a plan view, in a rectangular ring shape; and a P-type emitter region 120 surrounded by the polysilicon 130 and formed within the base region 140. The polysilicon 130 includes an extension portion 130a extending inside a contact region 141 of the base region 140 and electrically connected to the base region 140.

公开(公告)号：US20190006347A1

公开(公告)日：2019-01-03

申请号：US16123349

申请日：2018-09-06

申请人： ABLIC INC.

发明人： Takeshi MORITA ,  Kazuhiro TSUMURA

IPC分类号： H01L27/02 ,  H01L21/8238 ,  H01L29/06 ,  H01L27/092 ,  H01L29/36

摘要： In a semiconductor device that uses an N-channel MOS transistor as an electrostatic protection element, the N-channel MOS transistor has a plurality of electric field relaxing areas, three of which have in a longitudinal direction three different impurity concentrations decreasing from an N-type high concentration drain region downward, and three of which have in a lateral direction three different impurity concentrations decreasing from the N-type high concentration drain region toward a channel region. An electric field relaxing area that is in contact with the electric field relaxing areas in the longitudinal direction and with the electric field relaxing areas in the lateral direction has the lowest impurity concentration.