公开(公告)号：US09257504B2

公开(公告)日：2016-02-09

申请号：US14281075

申请日：2014-05-19

申请人： ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED ,  SKYWORKS SOLUTIONS (HONG KONG) LIMITED

发明人： Wai Tien Chan ,  Donald Ray Disney ,  Richard Kent Williams

IPC分类号： H01L21/70 ,  H01L29/06 ,  H01L21/265 ,  H01L21/761 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8234 ,  H01L21/8238

CPC分类号： H01L29/0646 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/76237 ,  H01L21/76243 ,  H01L21/76267 ,  H01L21/763 ,  H01L21/823481 ,  H01L21/823878 ,  H01L21/823892 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

摘要： Isolation structures for isolating semiconductor devices from a substrate include floor isolation regions buried within the substrate and one or more trenches extending from a surface of the substrate to the buried floor isolation region.

摘要翻译： 用于从衬底隔离半导体器件的隔离结构包括掩埋在衬底内的底部隔离区域和从衬底的表面延伸到掩埋地板隔离区域的一个或多个沟槽。

公开(公告)号：US20160027869A1

公开(公告)日：2016-01-28

申请号：US14875176

申请日：2015-10-05

申请人： ADVANCED ANALOGIC TECHNOLOGIES (HONG KONG) LIMITED ,  ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED

发明人： Wai Tien Chan ,  Donald Ray Disney ,  Richard Kent Williams

IPC分类号： H01L29/06 ,  H01L21/762 ,  H01L21/761

CPC分类号： H01L29/0646 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/76237 ,  H01L21/76243 ,  H01L21/76267 ,  H01L21/763 ,  H01L21/823481 ,  H01L21/823878 ,  H01L21/823892 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

摘要： An isolation structure formed in a semiconductor substrate of a first conductivity type includes a region of a second conductivity type opposite to the first conductivity type. The region of the second conductivity type is saucer-shaped and has a floor portion substantially parallel to the top surface of the substrate and a sloped sidewall portion. The sloped sidewall portion extends downward from the top surface of the substrate at an oblique angle and merges with the floor portion. The floor portion and the sloped sidewall portion together form an isolated pocket of the substrate.

摘要翻译： 形成在第一导电类型的半导体衬底中的隔离结构包括与第一导电类型相反的第二导电类型的区域。 第二导电类型的区域是碟形，并且具有基本上平行于基板的顶表面的底部部分和倾斜的侧壁部分。 倾斜的侧壁部分以斜角从基板的顶表面向下延伸并与底板部分合并。 地板部分和倾斜的侧壁部分一起形成基板的隔离袋。

公开(公告)号：US20160027868A1

公开(公告)日：2016-01-28

申请号：US14875165

申请日：2015-10-05

申请人： ADVANCED ANALOGIC TECHNOLOGIES (HONG KONG) LIMITED ,  ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED

发明人： Wai Tien Chan ,  Donald Ray Disney ,  Richard Kent Williams

IPC分类号： H01L29/06

CPC分类号： H01L29/0646 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/76237 ,  H01L21/76243 ,  H01L21/76267 ,  H01L21/763 ,  H01L21/823481 ,  H01L21/823878 ,  H01L21/823892 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

摘要： An isolation structure formed in a semiconductor substrate of a first conductivity type includes a floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate. A first trench extends downward from a surface of the substrate and overlaps onto the floor isolation region. The first trench includes walls lined with a dielectric material and contains a conductive material. The first trench and the floor isolation region electrically isolate a pocket of the first conductivity type from the substrate.

摘要翻译： 形成在第一导电类型的半导体衬底中的隔离结构包括与浸没在衬底中的第一导电类型相反的第二导电类型的底部隔离区域。 第一沟槽从衬底的表面向下延伸并且重叠到地板隔离区域上。 第一沟槽包括内衬有电介质材料并包含导电材料的壁。 第一沟槽和底部隔离区域将第一导电类型的袋与衬底电隔离。