公开(公告)号：US20200002231A1

公开(公告)日：2020-01-02

申请号：US16567055

申请日：2019-09-11

Applicant: AGC Inc.

Inventor： Shuhei OGAWA ,  Naomichi MIYAKAWA ,  Yasuo SHINOZAKI ,  Haruhiko YOSHINO ,  Kazunari TOHYAMA ,  Kazuto OHKOSHI

IPC: C04B35/117 ,  C04B38/00 ,  C04B38/06

Abstract: The present invention relates to a light-transmitting ceramic sintered body which contains air voids having pore diameters of 1 μm or more but less than 5 μm at a density within the range of from 10 voids/mm3 to 4,000 voids/mm3 (inclusive), while having a closed porosity of from 0.01% by volume to 1.05% by volume (inclusive). With respect to this light-transmitting ceramic sintered body, a test piece having a thickness of 1.90 mm has an average transmittance of 70% or more in the visible spectrum wavelength range of 500-900 nm, and the test piece having a thickness of 1.90 mm has a sharpness of 60% or more at a comb width of 0.5 mm.

公开(公告)号：US20230113344A1

公开(公告)日：2023-04-13

申请号：US18052299

申请日：2022-11-03

Applicant: AGC Inc.

Inventor： Kazuto OHKOSHI ,  Nobuhiro SHINOHARA

IPC: C04B35/584 ,  C04B35/645 ,  C04B35/624 ,  C04B38/00

Abstract: A dense ceramic sintered body is appropriately manufactured. A manufacturing method for the ceramic sintered body includes: a step of performing heat treatment on a ceramic green body as a green body of ceramic powder under a first condition; a step of performing heat treatment, under a second condition with a higher pressure than the first condition, on the ceramic green body subjected to the heat treatment under the first condition; and a step of performing heat treatment, under a third condition with a higher pressure than the second condition, on the ceramic green body subjected to the heat treatment under the second condition to manufacture the ceramic sintered body.

公开(公告)号：US20200287051A1

公开(公告)日：2020-09-10

申请号：US16878904

申请日：2020-05-20

Applicant: AGC Inc.

Inventor： Kunio MASUMO ,  Nao ISHIBASHI ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Kazuto OHKOSHI ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  H01L21/02 ,  H01L21/383 ,  H01L21/425 ,  H01L29/66

Abstract: A thin film transistor of a top-gate-coplanar type includes a source, a drain, a gate, and a semiconductor layer, wherein the semiconductor layer has a first low-resistance region for the source and a second low-resistance region for the drain, wherein the source and the drain are electrically connected through the first low-resistance region, the semiconductor layer, and the second low-resistance region, and wherein the semiconductor layer is formed of an oxide-based semiconductor containing gallium (Ga), zinc (Zn), and tin (Sn).