公开(公告)号：US20220037605A1

公开(公告)日：2022-02-03

申请号：US17451675

申请日：2021-10-21

Applicant: AGC Inc.

Inventor： Satoru WATANABE ,  Yoshitake TODA ,  Kunio MASUMO ,  Nao ISHIBASHI ,  Nobuhiro NAKAMURA ,  Shimpei MORITA ,  Hikaru KOBAYASHI

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: An assembly of nanoparticles includes metal oxide, the nanoparticles including zinc (Zn) and silicon (Si). In addition, the nanoparticles have an atomic ratio of Zn/(Zn+Si) in a range of 0.3 to 0.95. Further, the nanoparticles have an equivalent circular particle diameter in a range of 1 nm to 20 nm.

公开(公告)号：US20200287051A1

公开(公告)日：2020-09-10

申请号：US16878904

申请日：2020-05-20

Applicant: AGC Inc.

Inventor： Kunio MASUMO ,  Nao ISHIBASHI ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Kazuto OHKOSHI ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  H01L21/02 ,  H01L21/383 ,  H01L21/425 ,  H01L29/66

Abstract: A thin film transistor of a top-gate-coplanar type includes a source, a drain, a gate, and a semiconductor layer, wherein the semiconductor layer has a first low-resistance region for the source and a second low-resistance region for the drain, wherein the source and the drain are electrically connected through the first low-resistance region, the semiconductor layer, and the second low-resistance region, and wherein the semiconductor layer is formed of an oxide-based semiconductor containing gallium (Ga), zinc (Zn), and tin (Sn).