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1.发明申请公开(公告)号：US20200287002A1
公开(公告)日：2020-09-10
申请号：US16878937
申请日：2020-05-20
Applicant: AGC Inc. , TOKYO INSTITUTE OF TECHNOLOGY
Inventor： Hideo HOSONO , Junghwan Kim , Joonho Bang , Hideya Kumomi , Satoru Watanabe , Kazuto Ohkoshi , Naomichi Miyakawa , Nao Ishibashi , Kunio Masumo , Nobuhiro Nakamura
Abstract: An oxide-based semiconductor compound including metal cations and oxygen, wherein hydride ions H− originally bonded with the metal cations have been replaced with fluorine ions F− and at least one of the fluorine ions F− is bonded with one to three of the metal cations.
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公开(公告)号：US11075303B2
公开(公告)日：2021-07-27
申请号：US16117761
申请日：2018-08-30
Applicant: TOKYO INSTITUTE OF TECHNOLOGY , AGC Inc.
Inventor： Hideo Hosono , Toshio Kamiya , Hideya Kumomi , Junghwan Kim , Nobuhiro Nakamura , Satoru Watanabe , Naomichi Miyakawa
IPC: H01L29/786 , H01L51/50 , C23C14/08 , C23C14/34 , C23C14/28 , C23C14/58 , H01B5/14 , H01L23/31 , H01L23/532 , H01L29/417 , H01L29/423 , H01L31/04
Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.
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公开(公告)号：US11495767B2
公开(公告)日：2022-11-08
申请号：US17130403
申请日：2020-12-22
Applicant: TOKYO INSTITUTE OF TECHNOLOGY
Inventor： Hideo Hosono , Junghwan Kim , Hideya Kumomi
Abstract: A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.
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