公开(公告)号：US20200287002A1

公开(公告)日：2020-09-10

申请号：US16878937

申请日：2020-05-20

Applicant: AGC Inc. ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Junghwan Kim ,  Joonho Bang ,  Hideya Kumomi ,  Satoru Watanabe ,  Kazuto Ohkoshi ,  Naomichi Miyakawa ,  Nao Ishibashi ,  Kunio Masumo ,  Nobuhiro Nakamura

IPC: H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  C23C14/34 ,  C23C14/08 ,  C01G19/00 ,  H01J37/34

Abstract: An oxide-based semiconductor compound including metal cations and oxygen, wherein hydride ions H− originally bonded with the metal cations have been replaced with fluorine ions F− and at least one of the fluorine ions F− is bonded with one to three of the metal cations.