Magnetic inductive semiconductor device
    1.
    发明授权
    Magnetic inductive semiconductor device 失效
    磁感应半导体器件

    公开(公告)号:US3560806A

    公开(公告)日:1971-02-02

    申请号:US3560806D

    申请日:1968-01-16

    CPC classification number: H01F5/00 H01L43/06

    Abstract: A solid state inductive device comprises either a sandwich of a N-type and a P-type semiconductor with an insulating layer therebetween, or a semiconductor and a plurality of metal strips with a dielectric layer therebetween. A current electrode is connected to the opposite ends of the semiconductor and interconnect the semiconductors in the first embodiment, the metal strips being angular to the direction of the electrodes in the second embodiment. The device forms an inductive reactance between the electrodes upon application of a magnetic field in an angular direction to a side of the device.

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