ALUMINUM SUBSTRATE FOR A THIN FILM TRANSISTOR
    1.
    发明申请
    ALUMINUM SUBSTRATE FOR A THIN FILM TRANSISTOR 审中-公开
    用于薄膜晶体管的铝基板

    公开(公告)号:US20150318403A1

    公开(公告)日:2015-11-05

    申请号:US14700991

    申请日:2015-04-30

    Applicant: ALCOA INC.

    Abstract: A substrate comprises of a recrystallized aluminum alloy. An organic polymer layer coats the top surface of the aluminum substrate. A layer of one of: SiO2, SiN and Al2O3 is on the organic polymer and at least one electrode is adhered to the layer of one of: SiO2, SiN and Al2O3. A method comprises depositing an organic polymer on an aluminum substrate, annealing the aluminum substrate; depositing a layer of one of SiO2, SiN and Al2O3 on the organic polymer; and adhering an electrode to the layer of one of: SiO2, SiN and Al2O3.

    Abstract translation: 基材由再结晶铝合金构成。 有机聚合物层包覆铝基板的顶表面。 SiO 2,SiN和Al 2 O 3中的一层在有机聚合物上,并且至少一个电极粘附到SiO 2,SiN和Al 2 O 3之一层上。 一种方法包括在铝基板上沉积有机聚合物,退火铝基板; 在有机聚合物上沉积SiO 2,SiN和Al 2 O 3层; 并将电极粘附到SiO 2,SiN和Al 2 O 3之一的层上。

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