公开(公告)号：US20240363787A1

公开(公告)日：2024-10-31

申请号：US18648930

申请日：2024-04-29

申请人： ALMAE TECHNOLOGIES ,  Centre national de la recherche scientifique ,  Université Paris-Saclay

发明人： Deeb Claire ,  Pelouard Jean-Luc ,  Pardo Fabrice

IPC分类号： H01L31/108 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01L31/1085 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/1804

摘要： The present disclosure relates to a metal-semiconductor-metal photodetector configured to detect incident light in a given range of wavelengths comprising: an absorbing semiconductor layer (325); a first semiconductor layer (321) made of a first semiconductor material and in electrical contact with said absorbing semiconductor layer; a first metal electrode (340) in electrical contact with the first semiconductor layer (321), configured to produce with the first semiconductor layer (321), an electron Schottky junction, wherein the first semiconductor layer is arranged between said first metal electrode and the absorbing semiconductor layer; a second semiconductor layer (322) made of a second semiconductor material different from the first semiconductor material, in electrical contact with said absorbing semiconductor layer; a second metal electrode (330) in electrical contact with the second semiconductor layer configured to produce with the second semiconductor layer, a hole Schottky junction, wherein the second semiconductor layer is arranged between said second metal electrode and the absorbing semiconductor layer.