公开(公告)号：US3786359A

公开(公告)日：1974-01-15

申请号：US3786359D

申请日：1969-03-28

Applicant: ALPHA IND INC

Inventor： KING W

IPC: G21K1/14 ,  H01J37/317 ,  H01J49/28 ,  H01J23/10 ,  H01J37/26

CPC classification number: H01J37/3171 ,  G21K1/14 ,  H01J49/284

Abstract: The apparatus disclosed herein provides high energy positive ions, suitable for semiconductor doping, by projecting positive ions through an electron stripping gas at relatively low energy thereby to obtain positive ions which are multiply ionized or charged. Those ions which are raised to a preselected ionization level or state are segregated, and then accelerated by a relatively high accelerating voltage to achieve an energy suitable for ion implantation in a semiconductor matrix. Since the ions subjected to the relatively high accelerating voltage are multiply ionized, the energy imparted thereto, measured in electron volts, is substantially equal to an integer multiple of the accelerating voltage.

Abstract translation: 本文公开的装置通过以相对低的能量将正离子投射通过电子剥离气体来提供适合于半导体掺杂的高能正离子，从而获得多重电离或带电的正离子。 升高到预选电离水平或状态的那些离子被分离，然后通过相对高的加速电压加速，以获得适合于半导体基质中的离子注入的能量。 由于经受相对高的加速电压的离子被多次电离，所以以电子伏特测量的赋予的能量基本上等于加速电压的整数倍。