INSPECTION METHOD OF SENSOR DEVICE AND SENSOR DEVICE
    1.
    发明申请
    INSPECTION METHOD OF SENSOR DEVICE AND SENSOR DEVICE 有权
    传感器装置和传感器装置的检查方法

    公开(公告)号:US20150253372A1

    公开(公告)日:2015-09-10

    申请号:US14634495

    申请日:2015-02-27

    Abstract: In a reset period of a first stage, a switching circuit is turned on, and high-level driving voltages are output from driving circuits. In a charge transfer period subsequent to the reset period, the switching circuit is turned off, and low-level driving voltages are output from the driving circuits. It is determined whether or not an output voltage of an amplifier circuit in the charge transfer period is included in a normal range. In the inspection of a second stage subsequent to the first stage, in the same manner as in the normal measurement, voltages having opposite phases are output from the driving circuits in the reset period and the charge transfer period, and it is determined whether or not the output voltage of the amplifier circuit in the charge transfer period is included in a normal range.

    Abstract translation: 在第一级的复位期间,开关电路导通,高电平驱动电压从驱动电路输出。 在复位周期之后的电荷转移期间,切换电路被断开,低电平驱动电压从驱动电路输出。 确定电荷转移期间的放大电路的输出电压是否包含在正常范围内。 在第一阶段之后的第二阶段的检查中,以与正常测量相同的方式,在复位周期和电荷转移期间,从驱动电路输出具有相反相位的电压,并且确定是否 电荷转移期间的放大电路的输出电压被包含在正常范围内。

    VOLTAGE SELECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING THE SAME
    3.
    发明申请
    VOLTAGE SELECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING THE SAME 有权
    具有该电压选择电路的电压选择电路和半导体集成电路装置

    公开(公告)号:US20150256166A1

    公开(公告)日:2015-09-10

    申请号:US14634464

    申请日:2015-02-27

    CPC classification number: H03K5/1532

    Abstract: The highest voltage of a power supply voltage, a ground potential, and a signal voltage is output as a selection voltage from a terminal on the output side. In this case, terminals on the input side and the terminal on the output side are connected to each other through MOS transistors in the ON state. Therefore, it is possible to suppress a voltage drop due to a parasitic diode of each MOS transistor.

    Abstract translation: 从输出侧的端子输出电源电压,接地电位和信号电压的最高电压作为选择电压。 在这种情况下,输入侧的端子和输出侧的端子通过处于导通状态的MOS晶体管彼此连接。 因此,可以抑制由于每个MOS晶体管的寄生二极管引起的电压降。

Patent Agency Ranking