公开(公告)号：US09171832B2

公开(公告)日：2015-10-27

申请号：US13902729

申请日：2013-05-24

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  Karl Sweetland

IPC: H02H9/04 ,  H01L21/331 ,  H01L29/73 ,  H02H9/00 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0262 ,  H01L29/7436

Abstract: The disclosed technology relates to an apparatus for protection against transient electrical events. In one aspect, the apparatus includes an analog switch with high bipolar blocking voltage comprising a first p-type well region, a second p-type well region, a first n-type well region disposed between the first and second p-type well regions, and a deep n-type well region surrounding the first p-type well region, the second p-type well region, and the first n-type well region. The apparatus additionally includes a first native n-type region disposed between the first p-type well region the n-type well region and a second native n-type region disposed between the second p-type well region and n-type well region. The apparatus is configured such that the first p-type well region serves as an emitter/collector of a bidirectional PNP bipolar transistor. In addition, the apparatus is configured such that the first native n-type region, the first n-type well region, and the second native n-type region serves as a base of the bidirectional PNP bipolar transistor. Furthermore, the apparatus is configured such that the second p-type well region is configured as a collector/emitter of the bidirectional PNP bipolar transistor.

Abstract translation: 所公开的技术涉及用于防止瞬时电气事件的装置。 一方面，该装置包括具有高双极性阻断电压的模拟开关，包括第一p型阱区，第二p型阱区，设置在第一和第二p型阱区之间的第一n型阱区 以及围绕第一p型阱区域，第二p型阱区域和第一n型阱区域的深n型阱区域。 该装置还包括设置在第一p型阱区n型阱区和设置在第二p型阱区与n型阱区之间的第二天然n型区之间的第一天然n型区。 该装置被配置为使得第一p型阱区域用作双向PNP双极晶体管的发射极/集电极。 此外，该装置被配置为使得第一天然n型区域，第一n型阱区域和第二天然n型区域用作双向PNP双极晶体管的基极。 此外，该装置被配置为使得第二p型阱区被配置为双向PNP双极晶体管的集电极/发射极。

公开(公告)号：US08633509B2

公开(公告)日：2014-01-21

申请号：US13913202

申请日：2013-06-07

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  Karl Sweetland

IPC: H01L29/66

CPC classification number: H01L29/747 ,  H01L27/0262 ,  H01L29/66386

Abstract: An apparatus and method for high voltage transient electrical overstress protection are disclosed. In one embodiment, the apparatus includes an internal circuit electrically connected between a first node and a second node; and a protection circuit electrically connected between the first node and the second node. The protection circuit is configured to protect the internal circuit from transient electrical overstress events while maintaining a relatively high holding voltage upon activation. The holes- or electrons-enhanced conduction protection circuit includes a bi-directional bipolar device having an emitter/collector, a base, and a collector/emitter; a first bipolar transistor having an emitter electrically coupled to the first node, a base electrically coupled to the emitter/collector of the bipolar device, and a collector electrically coupled to the base of the bipolar transistor; and a second bipolar transistor having an emitter electrically coupled to the second node, a base electrically coupled to the collector/emitter of the bipolar device, and a collector electrically coupled to the base of the bipolar transistor.

Abstract translation: 公开了一种用于高压瞬态电过载保护的装置和方法。 在一个实施例中，该装置包括电连接在第一节点和第二节点之间的内部电路; 以及电连接在第一节点和第二节点之间的保护电路。 保护电路被配置为保护内部电路免受瞬态电应力事件的影响，同时在激活时保持相对较高的保持电压。 空穴或电子增强的传导保护电路包括具有发射极/集电极，基极和集电极/发射极的双向双极器件; 第一双极晶体管，其具有电耦合到第一节点的发射极，电耦合到双极器件的发射极/集电极的基极，以及电耦合到双极晶体管的基极的集电极; 以及具有电耦合到第二节点的发射极的第二双极晶体管，电耦合到双极器件的集电极/发射极的基极，以及电耦合到双极晶体管的基极的集电极。

公开(公告)号：US20130270605A1

公开(公告)日：2013-10-17

申请号：US13913202

申请日：2013-06-07

Applicant: ANALOG DEVICES, INC.

Inventor： Javier Alejandro Salcedo ,  Karl Sweetland

IPC: H01L29/747 ,  H01L29/66

CPC classification number: H01L29/747 ,  H01L27/0262 ,  H01L29/66386

Abstract: An apparatus and method for high voltage transient electrical overstress protection are disclosed. In one embodiment, the apparatus includes an internal circuit electrically connected between a first node and a second node; and a protection circuit electrically connected between the first node and the second node. The protection circuit is configured to protect the internal circuit from transient electrical overstress events while maintaining a relatively high holding voltage upon activation. The holes- or electrons-enhanced conduction protection circuit includes a bi-directional bipolar device having an emitter/collector, a base, and a collector/emitter; a first bipolar transistor having an emitter electrically coupled to the first node, a base electrically coupled to the emitter/collector of the bipolar device, and a collector electrically coupled to the base of the bipolar transistor; and a second bipolar transistor having an emitter electrically coupled to the second node, a base electrically coupled to the collector/emitter of the bipolar device, and a collector electrically coupled to the base of the bipolar transistor.

Abstract translation: 公开了一种用于高压瞬态电过载保护的装置和方法。 在一个实施例中，该装置包括电连接在第一节点和第二节点之间的内部电路; 以及电连接在第一节点和第二节点之间的保护电路。 保护电路被配置为保护内部电路免受瞬态电应力事件的影响，同时在激活时保持相对较高的保持电压。 空穴或电子增强的传导保护电路包括具有发射极/集电极，基极和集电极/发射极的双向双极器件; 第一双极晶体管，其具有电耦合到第一节点的发射极，电耦合到双极器件的发射极/集电极的基极，以及电耦合到双极晶体管的基极的集电极; 以及具有电耦合到第二节点的发射极的第二双极晶体管，电耦合到双极器件的集电极/发射极的基极，以及电耦合到双极晶体管的基极的集电极。

公开(公告)号：US20140346563A1

公开(公告)日：2014-11-27

申请号：US13902729

申请日：2013-05-24

Applicant: ANALOG DEVICES, INC.

Inventor： Javier Alejandro Salcedo ,  Karl Sweetland

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/7436

Abstract: The disclosed technology relates to an apparatus for protection against transient electrical events. In one aspect, the apparatus includes an analog switch with high bipolar blocking voltage comprising a first p-type well region, a second p-type well region, a first n-type well region disposed between the first and second p-type well regions, and a deep n-type well region surrounding the first p-type well region, the second p-type well region, and the first n-type well region. The apparatus additionally includes a first native n-type region disposed between the first p-type well region the n-type well region and a second native n-type region disposed between the second p-type well region and n-type well region. The apparatus is configured such that the first p-type well region serves as an emitter/collector of a bidirectional PNP bipolar transistor. In addition, the apparatus is configured such that the first native n-type region, the first n-type well region, and the second native n-type region serves as a base of the bidirectional PNP bipolar transistor. Furthermore, the apparatus is configured such that the second p-type well region is configured as a collector/emitter of the bidirectional PNP bipolar transistor.

Abstract translation: 所公开的技术涉及用于防止瞬时电气事件的装置。 一方面，该装置包括具有高双极性阻断电压的模拟开关，包括第一p型阱区，第二p型阱区，设置在第一和第二p型阱区之间的第一n型阱区 以及围绕第一p型阱区域，第二p型阱区域和第一n型阱区域的深n型阱区域。 该装置还包括设置在第一p型阱区n型阱区和设置在第二p型阱区与n型阱区之间的第二天然n型区之间的第一天然n型区。 该装置被配置为使得第一p型阱区域用作双向PNP双极晶体管的发射极/集电极。 此外，该装置被配置为使得第一天然n型区域，第一n型阱区域和第二天然n型区域用作双向PNP双极晶体管的基极。 此外，该装置被配置为使得第二p型阱区被配置为双向PNP双极晶体管的集电极/发射极。