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公开(公告)号：US10677822B2
公开(公告)日：2020-06-09
申请号：US15708958
申请日：2017-09-19
IPC分类号： G01R31/00 , G01R19/165 , H01L23/60 , H01L27/02 , G01R31/28 , G01N25/04 , H01L23/525 , H01L23/62 , H01L25/065
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.
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公开(公告)号：US20180088155A1
公开(公告)日：2018-03-29
申请号：US15708958
申请日：2017-09-19
IPC分类号： G01R19/165 , H01L23/62 , H01L23/525 , G01N25/04 , G01R31/28
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.
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公开(公告)号：US20190319011A1
公开(公告)日：2019-10-17
申请号：US16366476
申请日：2019-03-27
发明人： Rigan McGeehan , Cillian Burke , Alan J. O'Donnell
IPC分类号： H01L25/065 , H01L21/304 , H01L21/78 , H01L23/00 , H01L25/00
摘要： An integrated device package is disclosed. The package can include a carrier and an integrated device die having a front side and a back side. A mounting structure can serve to mount the back side of the integrated device die to the carrier. The mounting structure can comprise a first layer over the carrier and a second element between the back side of the integrated device die and the first layer. The first layer can comprise a first insulating material that adheres to the carrier, and the second element can comprise a second insulating material.
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公开(公告)号：US10551215B2
公开(公告)日：2020-02-04
申请号：US14737403
申请日：2015-06-11
发明人： Eoin E. English , Javier Calpe Maravilla , Robert Guyol , Alan J. O'Donnell , Maria Jose Martinez , Jan Kubik , Krystian Balicki
IPC分类号： G01D5/20
摘要： An embodiment of a position sensing system includes a signal generation circuit to generate an excitation signal according to a selected characteristic signal, a drive circuit to drive an excitation source with the excitation signal, an input circuit to receive a sensor output while driving the excitation source, a signal detection circuit to identify a component of the sensor output corresponding to the characteristic signal, and a control circuit to determine the position of the movable object as a function of the identified component of the sensor output. The positioning system may be included an electronic camera, where the movable object may be a lens. The excitation source may be a conductive coil, the excitation a magnetic field, and the sensor a magneto resistive sensor. Alternatively, the excitation source may be an optical excitation source, the excitation an optical excitation, and the sensor an optical sensor.
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5.发明申请公开(公告)号：US20190293692A1
公开(公告)日：2019-09-26
申请号：US16360356
申请日：2019-03-21
发明人： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC分类号： G01R19/165 , G01R31/00 , G01R31/28 , H01L23/525 , H01L27/02 , H01L23/60 , H01L23/62 , H02H9/04
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;
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