公开(公告)号：US20230058436A1

公开(公告)日：2023-02-23

申请号：US17441780

申请日：2020-12-25

Applicant: ANHUI UNIVERSITY ,  CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Chunyu PENG ,  Yangkuo ZHAO ,  Wenjuan LU ,  Xiulong WU ,  Zhiting LIN ,  Junning CHEN ,  Xin LI ,  Rumin JI ,  Jun HE ,  Zhan YING

IPC: G11C11/4091

Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and an offset voltage storage unit electrically connected to the amplification module; wherein, in an offset cancellation stage of the sense amplifier, the sense amplifier is configured to comprise a current mirror structure to store an offset voltage of the amplification module in an offset voltage storage unit. The present disclosure can realize the offset cancellation of the sense amplifier.

公开(公告)号：US20220029586A1

公开(公告)日：2022-01-27

申请号：US17472778

申请日：2021-09-13

Applicant: ANHUI UNIVERSITY ,  CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Xiulong WU ,  Li ZHAO ,  Yangkuo ZHAO ,  Jun HE ,  Xin LI ,  Zhan YING ,  Kanyu CAO ,  Wenjuan LU ,  Chunyu PENG ,  Zhiting LIN ,  Junning CHEN

IPC: H03F1/26 ,  G11C7/06 ,  G11C7/10 ,  G11C7/12 ,  G11C7/08

Abstract: The disclosure provides a Sense Amplifier (SA), a memory and a method for controlling the SA, and relates to the technical field of semiconductor memories. The SA includes: an amplifier module; an offset voltage storage unit electrically connected to the amplifier module and configured to store an offset voltage of the amplifier module in an offset elimination stage of the SA; and a load compensation unit electrically connected to the amplifier module and configured to compensate a difference between loads of the amplifier module in an amplification stage of the SA. The disclosure may improve an accuracy of reading data of the SA.

公开(公告)号：US20220208235A1

公开(公告)日：2022-06-30

申请号：US17441679

申请日：2020-12-25

Applicant: ANHUI UNIVERSITY

Inventor： Chunyu PENG ,  Junlin GE ,  Jun HE ,  Zhan YING ,  Xin LI ,  Kanyu CAO ,  Wenjuan LU ,  Zhiting LIN ,  Xiulong WU ,  Junning CHEN

IPC: G11C7/08 ,  G11C7/06

Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and a control module, electrically connected to the amplification module; wherein, in an offset compensation stage of the sense amplifier, the control module is used to configure the amplification module to comprise a diode structure, a current mirror structure, and an inverter with an input and an output connected together; and in a first amplification stage of the sense amplifier, the control module is used to configure the amplification module as an inverter. The present disclosure can realize the offset compensation of the sense amplifier, thereby improving the performance of semiconductor memories.