ULTRA-WIDEBAND ELECTROMAGNETIC BAND GAP (EBG) STRUCTURE AND CIRCUIT BOARD

    公开(公告)号:US20240120633A1

    公开(公告)日:2024-04-11

    申请号:US18539132

    申请日:2023-12-13

    CPC classification number: H01P7/00 H05K1/0236

    Abstract: An ultra-wideband electromagnetic band gap (EBG) structure includes multiple EBG units in an array. Each EBG unit includes a power plane, a dielectric substrate and a ground plane from top to bottom. The power plane includes a patch, a coupled complementary split ring resonator (C-CSRR) and a plurality of semi-improved Z-bridge structures. Each edge of the patch is provided with a semi-improved Z-bridge structure. The C-CSRR is provided within a ring formed by the semi-improved Z-bridge structures. The Z-bridge structure includes a first horizontal branch, a first vertical branch, a second horizontal branch and a second vertical branch connected in sequence. The second vertical branch is connected to the patch. First horizontal branches of adjacent EBG units are connected to each other. A circuit board including the aforementioned EBG structure is also provided.

    HIGH-SENSITIVITY FLEXIBLE THREE-DIMENSIONAL FORCE TACTILE SENSOR AND PREPARATION METHOD THEREOF

    公开(公告)号:US20230160761A1

    公开(公告)日:2023-05-25

    申请号:US17771818

    申请日:2021-12-31

    CPC classification number: G01L1/144

    Abstract: A high sensitivity flexible three-dimensional force tactile sensor includes a hemispherical contact, wherein the hemispherical contact includes a tray with a groove on the surface and a hemispherical protrusion arranged in the groove. A flexible inverted cone component connected to the lower surface of the hemispherical contact, wherein a plurality of flexible triangular excitation electrode is arranged on the side surface of the flexible inverted cone component. A flexible common electrode surrounding part of the flexible triangular excitation electrode, wherein a first cavity with an opening is opened inside the flexible common electrode, parts of the flexible triangular excitation electrode and the flexible inverted cone component are arranged in the first cavity of the flexible common electrode. The flexible triangular excitation electrode and the flexible inverted cone component have no contact with the inner wall of the first cavity of the flexible common electrode to form an air cavity.

    BROADBAND MILLIMETER WAVE CIRCULARLY POLARIZED ANTENNA ELEMENT, SINGLE-MODE ARRAY AND DUAL-MODE ARRAY

    公开(公告)号:US20240305014A1

    公开(公告)日:2024-09-12

    申请号:US18211942

    申请日:2023-06-20

    CPC classification number: H01Q21/24 H01Q9/285

    Abstract: Disclosed are a broadband millimeter-wave circularly polarized antenna element, a single-mode array, and a dual-mode array, relating to the technical field of circularly polarized antennas. A microstrip feeder is arranged on a lower surface of a second dielectric substrate of the antenna element. A coupling slot is etched on a metal ground layer, two metallized vias are formed on a first dielectric substrate, and a metal strip is tiled on an upper surface of the first dielectric substrate. Two L-shaped parasitic patches are also tiled on the first dielectric substrate. The two L-shaped parasitic patches are located on both sides of the metal strip, and the two L-shaped parasitic patches are rotationally symmetric about a center point of the upper surface of the first dielectric substrate. According to the present disclosure, a 3-dB axial ratio bandwidth of the antenna element is improved by using L-shaped parasitic patches.

    METHOD FOR DIAGNOSING INTERNAL LOSS MECHANISM OF SOLAR CELL

    公开(公告)号:US20240348206A1

    公开(公告)日:2024-10-17

    申请号:US18737928

    申请日:2024-06-07

    CPC classification number: H02S50/10

    Abstract: A method for diagnosing an internal loss mechanism of a solar cell is provided. The solar cell includes an anode and a cathode. An electron transport layer, an active layer and a hole transport layer are arranged in sequence from top to bottom between the cathode and the anode. The solar cell is modeled through a solar cell multi-physics simulation platform. Current density-voltage (JV) curves respectively of type A, type B, type C and type D are simulated by regulating a bulk defect and a surface defect of the active layer and a voltage scan rate. The solar cell is subjected to forward voltage scan and reverse voltage scan to obtain forward and reverse JV curves. According to the forward and reverse JV curves, whether the JV curve type of the solar cell is the type A, the type B, the type C or the type D is determined.

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