专利检索 ap:("ANJI MICROELECTRONICS (SHANGHAI) CO., LTD") AND inv:"Xiaoming Ren" 第 1 页

1.

发明申请
CHEMICAL MECHANICAL POLISHING SOLUTION 有权

公开(公告)号：US20230026568A1

公开(公告)日：2023-01-26

申请号：US17784094

申请日：2020-12-03

申请人： ANJI MICROELECTRONICS (SHANGHAI) CO., LTD

发明人： Shoutian Li , Xiaoming Ren , Changzheng Jia

IPC分类号： C09G1/02

摘要： Disclosed is a chemical mechanical polishing solution containing water, cerium oxide abrasive particles and hydroxylamine, which can also increase the removal rate of patterned silicon dioxide with further addition of 4-hydroxybenzoic acid or salicylhydroxamic acid.