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公开(公告)号：US11898063B2
公开(公告)日：2024-02-13
申请号：US16958338
申请日：2018-12-26
发明人： Wenting Zhou
IPC分类号： C09G1/02
CPC分类号： C09G1/02
摘要： The present invention discloses a chemical mechanical polishing slurry, and the chemical mechanical polishing slurry comprises silica abrasive particles and accelerating agents, wherein the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups. The chemical mechanical polishing slurry can simultaneously increase the removal rate of both silicon nitride and polysilicon.
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公开(公告)号：US11746257B2
公开(公告)日：2023-09-05
申请号：US16958391
申请日：2018-12-26
发明人： Jian Ma , Jianfen Jing , Junya Yang , Kai Song , Xinyuan Cai , Guohao Wang , Ying Yao , Pengcheng Bian
IPC分类号： C09G1/02 , H01L21/306 , H01L21/321
CPC分类号： C09G1/02 , H01L21/30625 , H01L21/3212
摘要： The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.
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公开(公告)号：US20230026568A1
公开(公告)日：2023-01-26
申请号：US17784094
申请日：2020-12-03
发明人： Shoutian Li , Xiaoming Ren , Changzheng Jia
IPC分类号： C09G1/02
摘要： Disclosed is a chemical mechanical polishing solution containing water, cerium oxide abrasive particles and hydroxylamine, which can also increase the removal rate of patterned silicon dioxide with further addition of 4-hydroxybenzoic acid or salicylhydroxamic acid.
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公开(公告)号：US20220056308A1
公开(公告)日：2022-02-24
申请号：US17418745
申请日：2019-12-18
发明人： Wenting ZHOU , Jianfen JING , Ying YAO , Xinyuan CAI , Jian MA , Heng LI
IPC分类号： C09G1/02 , H01L21/321
摘要： A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.
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公开(公告)号：US12098299B2
公开(公告)日：2024-09-24
申请号：US17418745
申请日：2019-12-18
发明人： Wenting Zhou , Jianfen Jing , Ying Yao , Xinyuan Cai , Jian Ma , Heng Li
IPC分类号： C09G1/02 , H01L21/321
CPC分类号： C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.
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公开(公告)号：US20210163786A1
公开(公告)日：2021-06-03
申请号：US16958338
申请日：2018-12-26
发明人： Wenting ZHOU
IPC分类号： C09G1/02
摘要： The present invention discloses a chemical mechanical polishing slurry, and the chemical mechanical polishing slurry comprises silica abrasive particles and accelerating agents, wherein the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups. The chemical mechanical polishing slurry can simultaneously increase the removal rate of both silicon nitride and polysilicon.
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公开(公告)号：US20210139740A1
公开(公告)日：2021-05-13
申请号：US16958391
申请日：2018-12-26
发明人： Jian MA , Jianfen JING , Junya YANG , Kai SONG , Xinyuan CAI , Guohao WANG , Ying YAO , Pengcheng BIAN
IPC分类号： C09G1/02
摘要： The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.
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