公开(公告)号：US10910557B2

公开(公告)日：2021-02-02

申请号：US16570492

申请日：2019-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Chi Ching ,  Renu Whig ,  Rongjun Wang

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  H01F41/32 ,  H01F10/32 ,  G11C11/16

Abstract: Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.