公开(公告)号：US09177815B2

公开(公告)日：2015-11-03

申请号：US13886924

申请日：2013-05-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Yi-Chiau Huang ,  Gregory Menk ,  Errol Antonio C. Sanchez ,  Bingxi Wood

IPC: H01L21/20 ,  H01L21/306 ,  H01L21/321 ,  H01L29/66

CPC classification number: H01L21/30625 ,  H01L21/3212 ,  H01L29/66795

Abstract: Methods for chemical mechanical planarization of patterned wafers are provided herein. In some embodiments, methods of processing a substrate having a first surface and a plurality of recesses disposed within the first surface may include: depositing a first material into the plurality of recesses to predominantly fill the plurality of recesses with the first material; depositing a second material different from the first material into the plurality of recesses and atop the substrate to fill the plurality of recesses and to form a layer atop the first surface; and planarizing the second material using a first slurry in a chemical mechanical polishing tool until the first surface is reached. In some embodiments, a second slurry, different than the first slurry, is used to planarize the substrate to a first level.

Abstract translation: 本文提供了图案化晶片的化学机械平面化方法。 在一些实施例中，处理具有设置在第一表面内的第一表面和多个凹槽的基底的方法可以包括：将第一材料沉积到多个凹部中，以主要用第一材料填充多个凹部; 将不同于所述第一材料的第二材料沉积到所述多个凹部中并且在所述基板的顶部上以填充所述多个凹部并且在所述第一表面的顶部上形成层; 以及使用化学机械抛光工具中的第一浆料平坦化所述第二材料，直到达到所述第一表面。 在一些实施方案中，使用与第一浆料不同的第二浆料将基材平面化至第一层。