公开(公告)号：US20150064919A1

公开(公告)日：2015-03-05

申请号：US14072430

申请日：2013-11-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Jinsu KIM ,  Xiaosong JI ,  Jinhan CHOI ,  Ho Jeong KIM ,  Byungkook KONG ,  Hoon Sang LEE

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J2237/3347 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/3083 ,  H01L21/31116 ,  H01L21/76224

Abstract: Embodiments of methods for etching a substrate include exposing the substrate to a first plasma formed from an inert gas; exposing the substrate to a second plasma formed from an oxygen-containing gas to form an oxide layer on a bottom and sides of a low aspect ratio feature and a high aspect ratio feature, wherein the oxide layer on the bottom of the low aspect ratio feature is thicker than on the bottom of the high aspect ratio feature; etching the oxide layer from the bottom of the low and high aspect ratio features with a third plasma to expose the bottom of the high aspect ratio feature while the bottom of the low aspect ratio feature remains covered; and exposing the substrate to a fourth plasma formed from a halogen-containing gas to etch the bottom of the low aspect ratio feature and the high aspect ratio feature.

Abstract translation: 用于蚀刻衬底的方法的实施例包括将衬底暴露于由惰性气体形成的第一等离子体; 将衬底暴露于由含氧气体形成的第二等离子体以在低纵横比特征和高纵横比特征的底部和侧面上形成氧化物层，其中低纵横比特征的底部上的氧化物层 比高宽比特征的底部厚; 使用第三等离子体从低和高纵横比特征的底部蚀刻氧化物层，以暴露高纵横比特征的底部，而低纵横比特征的底部保持覆盖; 并将衬底暴露于由含卤素气体形成的第四等离子体，以蚀刻低纵横比特征和高纵横比特征的底部。

公开(公告)号：US20150064880A1

公开(公告)日：2015-03-05

申请号：US14015780

申请日：2013-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Wan KIM ,  Hun Sang KIM ,  Changhun LEE ,  Ho Jeong KIM ,  Yi ZHOU

IPC: H01L21/322

CPC classification number: H01L21/02057

Abstract: Methods for performing post etch treatments on silicon surfaces etched using halogen chemistry are provided. The methods may be performed in-situ a chamber in which the silicon surfaces where etch, ex-situ the chamber, or in a hybrid process that combines both in-situ and ex-situ post etch treatment processes. In one embodiment the post etch treatment process includes exposing a substrate having a silicon surface etched using halogen chemistry to a gas mixture comprising CxHy and oxygen, wherein x and y are integers, forming a plasma from the gas mixture, binding halogen residues with species comprising the plasma to form non-volatile halogen containing elements, and pumping the non-volatile halogen containing elements from a chamber containing the substrate.

Abstract translation: 提供了使用卤素化学法蚀刻的硅表面上进行后蚀刻处理的方法。 这些方法可以原位执行，其中硅表面在其中蚀刻，非原位的室或在组合原位和非原位后蚀刻处理工艺的混合工艺中。 在一个实施例中，后蚀刻处理工艺包括将具有使用卤素化学物质蚀刻的硅表面的衬底暴露于包含C x H y和氧的气体混合物，其中x和y是整数，从气体混合物形成等离子体，将卤素残基与包含 所述等离子体形成非挥发性含卤素元素，并且从含有所述基底的室泵送所述非挥发性含卤素元素。