公开(公告)号：US20200075290A1

公开(公告)日：2020-03-05

申请号：US16117457

申请日：2018-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： KATSUMASA KAWASAKI ,  JUSTIN PHI ,  KARTIK RAMASWAMY ,  SERGIO FUKUDA SHOJI ,  DAISUKE SHIMIZU

IPC: H01J37/32

Abstract: Methods for RF pulse reflection reduction are provided herein. In some embodiments, a method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power includes; receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators, using the master RF generator to generate a transistor-transistor logic (TTL) signal having a base frequency and a first duty cycle, setting a multiplier for each RF generator, dividing the first duty cycle into a high level interval and a low level interval, determining a frequency command set for each RF generator and sending the frequency command set to each RF generator, wherein the frequency command set includes a frequency set point for each RF generator; and providing the plurality of pulsed RF power waveforms from the plurality of RF generators to a process chamber.

公开(公告)号：US20170099722A1

公开(公告)日：2017-04-06

申请号：US14882878

申请日：2015-10-14

Applicant: APPLIED MATERIALS, INC.

Inventor： KATSUMASA KAWASAKI ,  SERGIO FUKUDA SHOJI ,  JUSTIN PHI ,  DAISUKE SHIMIZU

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32183 ,  H01L21/3065 ,  H05H2001/4682

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, and providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration.