公开(公告)号：US20220069536A1

公开(公告)日：2022-03-03

申请号：US17009851

申请日：2020-09-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Rajesh Kumar PUTTI ,  Vinodh RAMACHANDRAN ,  Ananthkrishna JUPUDI ,  Lean Wui KOH

IPC: H01S3/041 ,  H01S3/067 ,  H01S3/23 ,  H01S3/042

Abstract: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.