公开(公告)号：US09355820B2

公开(公告)日：2016-05-31

申请号：US14484397

申请日：2014-09-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei Liu ,  Naomi Yoshida ,  Mandar Balasaheb Pandit

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/8238

CPC classification number: H01J37/321 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/823828

Abstract: Embodiments of methods for removing carbon-containing films are provided herein. In some embodiments, a method for removing a carbon-containing layer includes providing an ammonia containing process gas to a process chamber having a substrate with a silicon oxide layer disposed atop the substrate and a carbon-containing layer disposed atop the silicon oxide layer disposed in the process chamber; providing RF power to the process chamber to ignite the ammonia containing process gas to form a plasma; and exposing the substrate to NH and/or NH2 radicals and hydrogen radicals formed in the plasma to remove the carbon-containing layer.

Abstract translation: 本文提供了用于除去含碳膜的方法的实施方案。 在一些实施方案中，用于除去含碳层的方法包括向具有衬底的处理室提供含氨工艺气体，所述衬底具有设置在衬底顶部的氧化硅层和设置在设置在衬底上的氧化硅层顶部的含碳层 处理室; 向处理室提供RF功率以点燃含氨工艺气体以形成等离子体; 并将衬底暴露于NH和/或NH 2基团和在等离子体中形成的氢原子以除去含碳层。