公开(公告)号：US11421316B2

公开(公告)日：2022-08-23

申请号：US16584695

申请日：2019-09-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Mohamed Rafi ,  Muhammad Azim Bin Syed Sulaiman ,  Guan Huei See ,  Ang Yu Xin Kristy ,  Karthik Elumalai ,  Sriskantharajah Thirunavukarasu ,  Arvind Sundarrajan

IPC: H01L23/48 ,  H01L23/52 ,  C23C14/54 ,  H01L21/67 ,  H01L23/00

Abstract: Methods and apparatus for producing fine pitch patterning on a substrate. Warpage correction of the substrate is accomplished on a carrier or carrier-less substrate. A first warpage correction process is performed on the substrate by raising and holding a temperature of the substrate to a first temperature and cooling the carrier-less substrate to a second temperature. Further wafer level packaging processing is then performed such as forming vias in a polymer layer on the substrate. A second warpage correction process is then performed on the substrate by raising and holding a temperature of the substrate to a third temperature and cooling the substrate to a fourth temperature. With the warpage of the substrate reduced, a redistribution layer may be formed on the substrate with a 2/2 μm l/s fine pitch patterning.