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公开(公告)号：US10002771B1
公开(公告)日：2018-06-19
申请号：US15728604
申请日：2017-10-10
Applicant: APPLIED MATERIALS, INC.
Inventor： Prayudi Lianto , Kuma Hsiung , Eric J. Bergman , John L. Klocke , Mohamed Rafi , Muhammad Azim , Guan Huei See , Arvind Sundarrajan
IPC: H01L21/3105 , H01L21/687
CPC classification number: H01L21/31053 , H01L21/31058 , H01L21/68764
Abstract: A polymer layer on a substrate may be treated with ozone gas or with deionized water and ozone gas to increase a removal rate of the polymer layer in a chemical mechanical polishing (CMP) process. The ozone gas may be diffused directly into the polymer layer or through a thin layer of deionized water on the surface of the polymer layer and into the polymer layer. The deionized water may also be heated during the process to further enhance the diffusion of the ozone gas into the polymer layer.
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公开(公告)号：US11421316B2
公开(公告)日：2022-08-23
申请号：US16584695
申请日：2019-09-26
Applicant: APPLIED MATERIALS, INC.
Inventor： Prayudi Lianto , Mohamed Rafi , Muhammad Azim Bin Syed Sulaiman , Guan Huei See , Ang Yu Xin Kristy , Karthik Elumalai , Sriskantharajah Thirunavukarasu , Arvind Sundarrajan
Abstract: Methods and apparatus for producing fine pitch patterning on a substrate. Warpage correction of the substrate is accomplished on a carrier or carrier-less substrate. A first warpage correction process is performed on the substrate by raising and holding a temperature of the substrate to a first temperature and cooling the carrier-less substrate to a second temperature. Further wafer level packaging processing is then performed such as forming vias in a polymer layer on the substrate. A second warpage correction process is then performed on the substrate by raising and holding a temperature of the substrate to a third temperature and cooling the substrate to a fourth temperature. With the warpage of the substrate reduced, a redistribution layer may be formed on the substrate with a 2/2 μm l/s fine pitch patterning.
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