公开(公告)号：US20210202334A1

公开(公告)日：2021-07-01

申请号：US16731365

申请日：2019-12-31

Applicant: APPLIED MATERIALS, INC.

Inventor： PENG SUO ,  PRAYUDI LIANTO ,  GUAN HUEI SEE ,  ARVIND SUNDARRAJAN ,  LIT PING LAM ,  PANGYEN ONG ,  OLIVIA KOENTJORO ,  WEI-SHENG LEI ,  JUNGRAE PARK

IPC: H01L23/31 ,  H01L23/538 ,  H01L21/56 ,  H01L23/00 ,  H01L23/522 ,  H01L23/367

Abstract: A method of forming a semiconductor structure on a wafer includes depositing a polymer layer on the wafer in a wafer-level packaging process, forming at least one wafer-level packaging structure in the polymer layer using a direct writing process that alters a chemical property of portions of the polymer layer that have been directly written to, and removing portions of the polymer layer that have not been written to by the direct writing process revealing the at least one wafer-level packaging structure. In some embodiments, the direct writing process is a two-photon polymerization process that uses a femtosecond laser in combination with a pair of galvanometric laser scanners to solidify portions of the polymer layer to form the wafer-level packaging structure.