公开(公告)号：US20190257000A1

公开(公告)日：2019-08-22

申请号：US16282576

申请日：2019-02-22

Applicant: APPLIED MATERIALS, INC.

Inventor： NYI O. MYO ,  KEVIN BAUTISTA ,  ZHIYUAN YE ,  SCHUBERT S. CHU ,  YIHWAN KIM

IPC: C30B25/12 ,  H01L21/687 ,  C23C16/458

Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support including a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.

公开(公告)号：US20160111495A1

公开(公告)日：2016-04-21

申请号：US14885521

申请日：2015-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： ADAM BRAND ,  BINGXI SUN WOOD ,  NAOMI YOSHIDA ,  LIN DONG ,  SHIYU SUN ,  CHI-NUNG NI ,  YIHWAN KIM

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02 ,  H01L21/265 ,  H01L29/20 ,  H01L21/762

CPC classification number: H01L29/0673 ,  H01L21/30612 ,  H01L21/76224 ,  H01L29/20 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/78696

Abstract: A method of forming a semiconductor device includes: forming a superlattice structure atop the top surface of a substrate, wherein the superlattice structure comprises a plurality of first layers and a corresponding plurality of second layers alternatingly arranged in a plurality of stacked pairs; forming a lateral etch stop layer by epitaxial deposition of a material of the first layer or the second layer of the superlattice structure atop a sidewall of the superlattice structure, or by selectively oxidizing edges of the first layers and second layers of the superlattice structure; subsequently forming a source region adjacent a first end of the superlattice structure and a drain region adjacent a second opposing end of the superlattice structure; and selectively etching the superlattice structure to remove each of the first layers or each of the second layers to form a plurality of voids in the superlattice structure.

Abstract translation: 一种形成半导体器件的方法包括：在衬底的顶表面上方形成超晶格结构，其中超晶格结构包括多个第一层和交替排列成多个堆叠对的相应的多个第二层; 通过在所述超晶格结构的侧壁的外侧沉积超晶格结构的第一层或第二层的材料，或通过选择性地氧化超晶格结构的第一层和第二层的边缘来形成横向蚀刻停止层; 随后形成邻近超晶格结构的第一端的源极区域和与超晶格结构的第二相对端相邻的漏极区域; 并且选择性地蚀刻超晶格结构以去除第一层或第二层中的每一层以在超晶格结构中形成多个空隙。

公开(公告)号：US20170314158A1

公开(公告)日：2017-11-02

申请号：US15595079

申请日：2017-05-15

Applicant: APPLIED MATERIALS, INC.

Inventor： NYI O. MYO ,  KEVIN BAUTISTA ,  ZHIYUAN YE ,  SCHUBERT S. CHU ,  YIHWAN KIM

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/687

CPC classification number: C30B25/12 ,  C23C16/4586 ,  H01L21/68735 ,  H01L21/68742

Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.