公开(公告)号：US20200176247A1

公开(公告)日：2020-06-04

申请号：US16699712

申请日：2019-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： LUPING LI ,  SHIH CHUNG CHEN ,  KAZUYA DAITO ,  LIN DONG ,  ZHEBO CHEN ,  YIXIONG YANG ,  STEVEN HUNG

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.

公开(公告)号：US20190057863A1

公开(公告)日：2019-02-21

申请号：US16104352

申请日：2018-08-17

Applicant: APPLIED MATERIALS, INC.

Inventor： YIXIONG YANG ,  PAUL F. MA ,  WEI V. TANG ,  WENYU ZHANG ,  SHIH CHUNG CHEN ,  CHEN HAN LIN ,  CHI-CHOU LIN ,  YI XU ,  YU LEI ,  NAOMI YOSHIDA ,  LIN DONG ,  SIDDARTH KRISHNAN

IPC: H01L21/02 ,  H01L29/40 ,  H01L21/28

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

公开(公告)号：US20160111495A1

公开(公告)日：2016-04-21

申请号：US14885521

申请日：2015-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： ADAM BRAND ,  BINGXI SUN WOOD ,  NAOMI YOSHIDA ,  LIN DONG ,  SHIYU SUN ,  CHI-NUNG NI ,  YIHWAN KIM

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02 ,  H01L21/265 ,  H01L29/20 ,  H01L21/762

CPC classification number: H01L29/0673 ,  H01L21/30612 ,  H01L21/76224 ,  H01L29/20 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/78696

Abstract: A method of forming a semiconductor device includes: forming a superlattice structure atop the top surface of a substrate, wherein the superlattice structure comprises a plurality of first layers and a corresponding plurality of second layers alternatingly arranged in a plurality of stacked pairs; forming a lateral etch stop layer by epitaxial deposition of a material of the first layer or the second layer of the superlattice structure atop a sidewall of the superlattice structure, or by selectively oxidizing edges of the first layers and second layers of the superlattice structure; subsequently forming a source region adjacent a first end of the superlattice structure and a drain region adjacent a second opposing end of the superlattice structure; and selectively etching the superlattice structure to remove each of the first layers or each of the second layers to form a plurality of voids in the superlattice structure.

Abstract translation: 一种形成半导体器件的方法包括：在衬底的顶表面上方形成超晶格结构，其中超晶格结构包括多个第一层和交替排列成多个堆叠对的相应的多个第二层; 通过在所述超晶格结构的侧壁的外侧沉积超晶格结构的第一层或第二层的材料，或通过选择性地氧化超晶格结构的第一层和第二层的边缘来形成横向蚀刻停止层; 随后形成邻近超晶格结构的第一端的源极区域和与超晶格结构的第二相对端相邻的漏极区域; 并且选择性地蚀刻超晶格结构以去除第一层或第二层中的每一层以在超晶格结构中形成多个空隙。