公开(公告)号：US20190257000A1

公开(公告)日：2019-08-22

申请号：US16282576

申请日：2019-02-22

Applicant: APPLIED MATERIALS, INC.

Inventor： NYI O. MYO ,  KEVIN BAUTISTA ,  ZHIYUAN YE ,  SCHUBERT S. CHU ,  YIHWAN KIM

IPC: C30B25/12 ,  H01L21/687 ,  C23C16/458

Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support including a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.

公开(公告)号：US20140273518A1

公开(公告)日：2014-09-18

申请号：US14204819

申请日：2014-03-11

Applicant: APPLIED MATERIALS, INC.

Inventor： MATTHEW S. ROGERS ,  KEVIN BAUTISTA

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02

CPC classification number: C23C16/52 ,  C23C16/045 ,  C23C16/452 ,  C23C16/45502 ,  C23C16/4584 ,  H01L21/02057 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3211

Abstract: Methods of forming a layer on a substrate may include providing a substrate to a process chamber, the process chamber having a gas port, an exhaust, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas flows across the substrate; providing a plasma such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular; and rotating the substrate while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate.

Abstract translation: 在基板上形成层的方法可以包括向处理室提供衬底，处理室具有设置在气体端口和排气之间的气体端口，排气口和等离子体端口; 在第一方向上从气体端口提供处理气体，使得处理气体流过基板; 提供等离子体，使得等离子体的流动与处理气体的流以非垂直的角度相互作用; 以及在提供处理气体和等离子体的同时旋转衬底，其中通过调节工艺气体的流速，等离子体的流速，等离子体的流动角度，角度等等来控制该层的厚度分布 与工艺气体的流动或衬底的旋转方向相互作用。

公开(公告)号：US20170314158A1

公开(公告)日：2017-11-02

申请号：US15595079

申请日：2017-05-15

Applicant: APPLIED MATERIALS, INC.

Inventor： NYI O. MYO ,  KEVIN BAUTISTA ,  ZHIYUAN YE ,  SCHUBERT S. CHU ,  YIHWAN KIM

IPC: C30B25/12 ,  C23C16/458 ,  H01L21/687

CPC classification number: C30B25/12 ,  C23C16/4586 ,  H01L21/68735 ,  H01L21/68742

Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.