公开(公告)号：US20210289791A1

公开(公告)日：2021-09-23

申请号：US17264766

申请日：2019-07-30

Applicant: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY

Inventor： Alexander Green ,  Qing Hua Wang ,  Sanchari Saha ,  Abhishek Debnath

IPC: A01N59/16 ,  A01N59/02 ,  A01N25/32 ,  A01N25/10 ,  A61L31/16 ,  A61L31/10

Abstract: Biocompatible polymer-coated transition metal chalcogenide (TMC) nanomaterials are provided herein. In particular, provided herein are two-dimensional polymer-coated TMC nanomaterials having excellent antimicrobial properties and biocompatibility, as well as methods of inhibiting microbiological growth on, or in, devices coated by or otherwise comprising the biocompatible polymer-coated transition metal chalcogenide (TMC) nanomaterials. In some cases, the biopolymer coating encapsulating the TMC nanomaterial comprises short synthetic single-stranded DNAs (ssDNAs). As described herein, ssDNA-encapsulated TMDCs exhibit no cytotoxicity against human cell lines at concentrations up to 0.25 mg/mL, but they exhibit exceptionally strong bactericidal activity against both gram-positive and gram-negative bacteria, including antibiotic-resistant Escherichia coli and a gram-positive methicillin-resistant Staphylococcus aureus (MRSA) strain. In other cases, TMDCs encapsulated by poly-L-lysine and Pluronic F77 display strong activity against multi drug resistance bacteria and form coatings that strongly inhibit bacterial biofilms, while TMDCs encapsulated by chitosan exhibit strong activity against fungi.

公开(公告)号：US10155782B2

公开(公告)日：2018-12-18

申请号：US15288952

申请日：2016-10-07

Applicant: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY

Inventor： Qing Hua Wang ,  Ximo Chu ,  Alexander Green ,  Ahmed Yousaf

IPC: C07F11/00 ,  C09K11/06 ,  C09K11/02 ,  C09K11/68

Abstract: Embodiments of the invention provide a lithium-free metal dichalcogenides functionalization method where a metal dichalcogenide including a surface of predominantly semiconducting 2H phase is reacted with an aryl diazonium salt by exposing at least a portion of transition metal dichalcogenide to the aryl diazonium salt in the absence of alkyl lithium or alkyl lithium. A substantial portion of the reaction of the at least one aryl diazonium salt with the at least one transition metal dichalcogenide occurs with the semiconducting 2H phase. The aryl diazonium salt can be 4-nitrobenzenediazonium tetrafluoroborate or 4-carboxybenzene diazonium tetrafluoroborate, and the metal dichalcogenide can be MoS2. The semiconducting 2H phase of the transition metal dichalcogenide is derived directly from mechanical exfoliation such as mechanical cleaving and/or sonication.