公开(公告)号：US20090261358A1

公开(公告)日：2009-10-22

申请号：US12414457

申请日：2009-03-30

申请人： ASHAY CHITNIS ,  JOHN EDMOND ,  JEFFREY CARL BRITT ,  BERND P. KELLER ,  DAVID TODD EMERSON ,  MICHAEL JOHN BERGMANN ,  JASPER S. CABALU

发明人： ASHAY CHITNIS ,  JOHN EDMOND ,  JEFFREY CARL BRITT ,  BERND P. KELLER ,  DAVID TODD EMERSON ,  MICHAEL JOHN BERGMANN ,  JASPER S. CABALU

IPC分类号： H01L33/00 ,  H01L21/66 ,  B23B47/00

CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2933/0041 ,  Y10T408/47

摘要： A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

摘要翻译： 一种用于制造发光二极管（LED）芯片的方法，包括通常在晶片上提供多个LED，并用转换材料涂覆LED，使得来自LED的至少一些光通过转换材料并被转换。 来自LED芯片的光发射包括来自转换材料的光，通常与LED光结合。 测量至少一些LED芯片的发射特性，并且除去LED上的至少一些转换材料以改变LED芯片的发射特性。 本发明特别适用于在晶片上制造LED芯片，其中LED芯片具有在目标发射特性范围内的发光特性。 该目标范围可以落在CIE曲线上的发射区域内，以减少对来自晶片的LED进行合并的需要。 晶片上的LED芯片的发射特性可以通过在LED上微转换材料来调节到期望的范围。