公开(公告)号：US20150162183A1

公开(公告)日：2015-06-11

申请号：US14570668

申请日：2014-12-15

Applicant: ASM INTERNATIONAL N.V.

Inventor： VILJAMI PORE ,  MIKKO RITALA ,  MARKKU LESKELA

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01L21/0228 ,  C23C16/405 ,  C23C16/45531 ,  H01G4/1218 ,  H01G4/33 ,  H01L28/60 ,  H01L28/75

Abstract: The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.