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公开(公告)号:US20240218510A1
公开(公告)日:2024-07-04
申请号:US18398894
申请日:2023-12-28
申请人: ASM IP Holding B. V.
发明人: Paul Chatelain , Arpita Saha , David Kurt de Roest , Yoann Tomczak , Charles Dezelah , Daniele Piumi
IPC分类号: C23C16/455 , C23C16/18 , C23C16/56
CPC分类号: C23C16/45542 , C23C16/18 , C23C16/45553 , C23C16/56
摘要: Systems and methods for forming an antimony containing film on a substrate. Related structures and films are also disclosed. The antimony films are be formed by a plasma enhanced atomic layer deposition process. The antimony films can be utilized as underlayers in EUV lithography processes.