公开(公告)号：US20240404891A1

公开(公告)日：2024-12-05

申请号：US18677160

申请日：2024-05-29

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Shujin Huang ,  Kevin Eugene Quinn ,  Yang Wang ,  Zhizhong Chen ,  Chengzi Huang

IPC: H01L21/66 ,  H01L21/324

Abstract: Substrate processing systems and methods include: (a) seating a substrate on a support; (b) optically measuring center substrate temperature using a first pyrometer; (c) optically measuring edge substrate temperature using a second pyrometer; and (d) determining an edge offset temperature between the edge substrate temperature and the center substrate temperature. Three temperature ramping steps are used to heat up the substrate for processing: two fast ramping steps and one slow ramping steps. After substrate processing, an initial, controlled cooling step is provided. During at least the second fast temperature ramping step, the slow temperature ramping step, the substrate processing step(s), and the initial controlled cooling step, heating of the substrate is controlled to place and/or hold the edge offset temperature within predetermined ranges in order to maintain uniform temperature and/or a desired temperature gradient across the substrate. Such systems and methods help avoid crystal defects (e.g., slip) and/or auto-doping.