公开(公告)号：US20210225688A1

公开(公告)日：2021-07-22

申请号：US17141610

申请日：2021-01-05

Applicant: ASM IP HOLDING B.V.

Inventor： Matthew Goodman ,  Thomas John Kirschenheiter ,  Kevin Eugene Quinn

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/67 ,  C30B25/12 ,  C30B29/06 ,  C23C16/24 ,  C23C16/458

Abstract: The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

公开(公告)号：US11594444B2

公开(公告)日：2023-02-28

申请号：US17141610

申请日：2021-01-05

Applicant: ASM IP HOLDING B.V.

Inventor： Matthew Goodman ,  Thomas John Kirschenheiter ,  Kevin Eugene Quinn

IPC: C30B25/10 ,  H01L21/687 ,  H01L21/02 ,  C23C16/458 ,  C30B25/12 ,  C30B29/06 ,  C23C16/24 ,  H01L21/67

Abstract: The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

公开(公告)号：US20240404891A1

公开(公告)日：2024-12-05

申请号：US18677160

申请日：2024-05-29

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Shujin Huang ,  Kevin Eugene Quinn ,  Yang Wang ,  Zhizhong Chen ,  Chengzi Huang

IPC: H01L21/66 ,  H01L21/324

Abstract: Substrate processing systems and methods include: (a) seating a substrate on a support; (b) optically measuring center substrate temperature using a first pyrometer; (c) optically measuring edge substrate temperature using a second pyrometer; and (d) determining an edge offset temperature between the edge substrate temperature and the center substrate temperature. Three temperature ramping steps are used to heat up the substrate for processing: two fast ramping steps and one slow ramping steps. After substrate processing, an initial, controlled cooling step is provided. During at least the second fast temperature ramping step, the slow temperature ramping step, the substrate processing step(s), and the initial controlled cooling step, heating of the substrate is controlled to place and/or hold the edge offset temperature within predetermined ranges in order to maintain uniform temperature and/or a desired temperature gradient across the substrate. Such systems and methods help avoid crystal defects (e.g., slip) and/or auto-doping.