公开(公告)号：US20250003062A1

公开(公告)日：2025-01-02

申请号：US18755620

申请日：2024-06-26

Applicant: ASM IP Holding B.V.

Inventor： Shujin Huang ,  Junwei Su ,  Yang Wang

IPC: C23C16/44 ,  C23C16/52 ,  H01L21/02

Abstract: A material layer deposition method includes receiving, at a controller operatively connected to a semiconductor processing system, a process recipe including a precoat thickness parameter. An expected precoat thickness using the precoat thickness parameter using the controller and the expected precoat thickness is compared to a predetermined precoat thickness value using the controller. A precoat material layer is deposited onto a substrate support arranged within the semiconductor processing system using the process recipe when the expected precoat thickness is less than the predetermined precoat thickness value and user output is provided to a user display operatively associated with the controller when the expected precoat thickness is greater than the predetermined precoat thickness value. Semiconductor processing systems and computer program products are also provided.

公开(公告)号：US20240425986A1

公开(公告)日：2024-12-26

申请号：US18746189

申请日：2024-06-18

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Jiwen Xiang ,  Zhizhong Chen ,  Yang Wang ,  Xing Lin

IPC: C23C16/455 ,  C23C16/52

Abstract: Methods and apparatuses for decoupling the tuning of cross-substrate thickness variation and cross-substrate resistance variation in a gas injection system are described. A controller in a gas injection system may deposit, via control of the plurality of first mass flow controllers (MFCs) and the plurality of second MFCs, a material layer deposited on a substrate. The controller may adjust, via control of the plurality of first MFCs, a cross-substrate thickness variation of the material layer. The controller may adjust, via control of the plurality of second MFCs and independent of the cross-substrate thickness variation, cross-substrate resistivity variation of the material layer.

公开(公告)号：US20240404891A1

公开(公告)日：2024-12-05

申请号：US18677160

申请日：2024-05-29

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Shujin Huang ,  Kevin Eugene Quinn ,  Yang Wang ,  Zhizhong Chen ,  Chengzi Huang

IPC: H01L21/66 ,  H01L21/324

Abstract: Substrate processing systems and methods include: (a) seating a substrate on a support; (b) optically measuring center substrate temperature using a first pyrometer; (c) optically measuring edge substrate temperature using a second pyrometer; and (d) determining an edge offset temperature between the edge substrate temperature and the center substrate temperature. Three temperature ramping steps are used to heat up the substrate for processing: two fast ramping steps and one slow ramping steps. After substrate processing, an initial, controlled cooling step is provided. During at least the second fast temperature ramping step, the slow temperature ramping step, the substrate processing step(s), and the initial controlled cooling step, heating of the substrate is controlled to place and/or hold the edge offset temperature within predetermined ranges in order to maintain uniform temperature and/or a desired temperature gradient across the substrate. Such systems and methods help avoid crystal defects (e.g., slip) and/or auto-doping.