公开(公告)号：US20240321579A1

公开(公告)日：2024-09-26

申请号：US18608609

申请日：2024-03-18

Applicant: ASM IP Holding B.V.

Inventor： Devika Choudhury ,  Jereld Lee Winkler ,  Kamesh Mullapudi ,  Mihaela Balseanu ,  Michael Schmotzer

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/02661 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144

Abstract: Methods for forming a semiconductor structure are disclosed. The methods include forming a bilayer hardmask by depositing a first hardmask layer and a second hardmask layer over a substrate including a first region and a second region. Exemplary structures formed can include CMOS device structures.