公开(公告)号：USD940837S1

公开(公告)日：2022-01-11

申请号：US29702865

申请日：2019-08-22

Applicant: ASM IP Holding B.V.

Designer： DongRak Jung ,  JiHwan Ryu ,  HwiMin Nam

公开(公告)号：USD930782S1

公开(公告)日：2021-09-14

申请号：US29702881

申请日：2019-08-22

Applicant: ASM IP Holding B.V.

Designer： JiHwan Ryu ,  HwiMin Nam ,  Hyeangi Oh

公开(公告)号：USD979506S1

公开(公告)日：2023-02-28

申请号：US29702888

申请日：2019-08-22

Applicant: ASM IP Holding B.V.

Designer： DongRak Jung ,  WooChan Kim ,  JiHwan Ryu

公开(公告)号：US20220243322A1

公开(公告)日：2022-08-04

申请号：US17585224

申请日：2022-01-26

Applicant: ASM IP Holding B.V.

Inventor： TaeWoong Kim ,  JiHwan Ryu ,  YongWoong Jeong ,  YoungSim Kim ,  YoungMin Kim

IPC: C23C16/44 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455

Abstract: Provided is a reactor capable of improving the symmetry of the profile of a thin film deposited on a substrate with an asymmetric exhaust structure, wherein a distance between a gas flow control ring (FCR) and an exhaust unit on one side where an exhaust port is located is greater than a distance between the FCR and the exhaust unit on the opposite side of the exhaust port.