公开(公告)号：US20240006161A1

公开(公告)日：2024-01-04

申请号：US18214255

申请日：2023-06-26

Applicant: ASM IP Holding B.V.

Inventor： HaeIn Kim ,  HakJoo Lee ,  KiKang Kim ,  YongWoong Jeong ,  YoungMin Kim

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32266 ,  H01J37/32853 ,  H01J2237/334 ,  H01J2237/327

Abstract: A substrate processing method capable of preventing a damage to a reactor and a lower film includes: supplying a substrate having a pattern structure; forming a layer on the pattern structure; generating active species by applying plasma on the substrate; and selectively etching a layer on the pattern structure generated by the active species by performing isotropic etching on the layer, wherein the applying of the plasma includes: increasing a density of the active species; and increasing a mobility of the active species.

公开(公告)号：US20230070340A1

公开(公告)日：2023-03-09

申请号：US17896340

申请日：2022-08-26

Applicant: ASM IP Holding B.V.

Inventor： YongWoong Jeong ,  HakJoo Lee ,  KiKang Kim ,  JongHyun Ahn ,  YoungMin Kim ,  YoungSim Kim

IPC: C23C16/44 ,  C23C16/455

Abstract: Provided is a method for seasoning a reactor in which a dry cleaning step and a first seasoning step are carried out at the first temperature, then the temperature is raised to a second temperature. The method also comprises a second seasoning step and a substrate processing step are carried out at the second temperature. The seasoning step of the disclosure suppresses dry cleaning byproducts from evaporating, spreading and re-spreading in a reactor. Thus, deterioration of the film quality deposited on a substrate is prevented, extending the wet etch cycle of the reactor and improving the uptime and the efficiency of the reactor.

公开(公告)号：US20220243322A1

公开(公告)日：2022-08-04

申请号：US17585224

申请日：2022-01-26

Applicant: ASM IP Holding B.V.

Inventor： TaeWoong Kim ,  JiHwan Ryu ,  YongWoong Jeong ,  YoungSim Kim ,  YoungMin Kim

IPC: C23C16/44 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455

Abstract: Provided is a reactor capable of improving the symmetry of the profile of a thin film deposited on a substrate with an asymmetric exhaust structure, wherein a distance between a gas flow control ring (FCR) and an exhaust unit on one side where an exhaust port is located is greater than a distance between the FCR and the exhaust unit on the opposite side of the exhaust port.