公开(公告)号：US20240258101A1

公开(公告)日：2024-08-01

申请号：US18199092

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jihye Yang ,  Hongsuk Kim ,  JuHyuk Park ,  SungHa Choi ,  SangHeon Yong ,  KiHun Kim

IPC: H01L21/02 ,  H01L23/14

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02359 ,  H01L23/14

Abstract: Disclosed is a substrate processing method comprising providing a substrate having a gap in a surface thereof into a reaction space, partially filling each of the plurality of gaps with a flowable silicon nitride film, forming a silicon oxide film partially filled in the gap by converting the silicon nitride film into the silicon oxide film, fully filling the gap, which is partially filled with the silicon oxide film, with a silicon nitride film, and forming a silicon oxide film to be fully filled in the gap, by converting the silicon nitride film into the silicon oxide film.

公开(公告)号：US20240258102A1

公开(公告)日：2024-08-01

申请号：US18199018

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jihye Yang ,  Hongsuk Kim ,  JuHyuk Park ,  SungHa Choi ,  SangHeon Yong ,  KiHun Kim

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/0223 ,  H01L21/02252

Abstract: A substrate processing method includes providing a substrate having a gap structure into a reaction space, and supplying a silicon precursor and nitrogen reactant gas into the reaction space, and depositing a flowable silicon nitride film on the substrate to fill at least a part of the gap of the substrate, while maintaining an inside of the reaction space in a plasma state by applying radio frequency (RF) power in a pulsed mode, wherein as a duty ratio of the RF power decreases, fewer micropores are generated in the silicon nitride film in the gap.

公开(公告)号：US20250054753A1

公开(公告)日：2025-02-13

申请号：US18795432

申请日：2024-08-06

Applicant: ASM IP Holding B.V.

Inventor： KiHun Kim ,  SangHeon Yong ,  Sungha Choi ,  JuHyuk Park ,  Jihye Yang ,  Jaewoo Jeong ,  Shinya Yoshimoto ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56

Abstract: Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a vacuum UV radiation. The vacuum UV radiation may be applied in a pulsed mode.