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公开(公告)号:US11551925B2
公开(公告)日:2023-01-10
申请号:US16828885
申请日:2020-03-24
Applicant: ASM IP Holding B.V.
Inventor: HeeSung Kang , YoonKi Min , WanGyu Lim , JinGeun Yu , JaeOk Ko , YoungHoon Kim
IPC: H01L21/02 , H01L21/311
Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.
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公开(公告)号:US20200312652A1
公开(公告)日:2020-10-01
申请号:US16828885
申请日:2020-03-24
Applicant: ASM IP Holding B.V.
Inventor: HeeSung Kang , YoonKi Min , WanGyu Lim , JinGeun Yu , JaeOk Ko , YoungHoon Kim
IPC: H01L21/02 , H01L21/311
Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.
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