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公开(公告)号：US20210143003A1
公开(公告)日：2021-05-13
申请号：US17093564
申请日：2020-11-09
Applicant: ASM IP Holding B.V.
Inventor： Hideaki Fukuda , Shinya Ueda , Kazuhiro Kimura
IPC: H01L21/02 , C23C16/40 , C23C16/455
Abstract: Methods for depositing on a surface of a substrate are disclosed. Exemplary methods include depositing a silicon oxide material using a cyclical deposition process, and reflowing the material during one or more of the step of depositing and a post-deposition anneal step. Structures including a layer of the material are also disclosed.
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