公开(公告)号：US20210225643A1

公开(公告)日：2021-07-22

申请号：US17152592

申请日：2021-01-19

Applicant: ASM IP Holding B.V.

Inventor： Aurélie Kuroda ,  Ryoko Zhang ,  Masaki Tokunaga ,  Ling-Chi Hwang ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/509

Abstract: Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen. The step of pretreating can additionally include a step of exposing the surface to a gas comprising silicon.