公开(公告)号：US11037780B2

公开(公告)日：2021-06-15

申请号：US15838428

申请日：2017-12-12

Applicant: ASM IP Holding B.V.

Inventor： Toshiaki Iijima ,  Masaki Tokunaga ,  Jun Kawahara

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50

Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

公开(公告)号：US20180119283A1

公开(公告)日：2018-05-03

申请号：US15340512

申请日：2016-11-01

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Masaki Tokunaga ,  Hideaki Fukuda

IPC: C23C16/505 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44 ,  C23C16/32 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/505 ,  C23C16/045 ,  C23C16/32 ,  C23C16/325 ,  C23C16/34 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/509 ,  C23C16/52

Abstract: A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.

公开(公告)号：US10435790B2

公开(公告)日：2019-10-08

申请号：US15340512

申请日：2016-11-01

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Masaki Tokunaga ,  Hideaki Fukuda

IPC: C23C16/505 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/52 ,  C23C16/04

Abstract: A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.

公开(公告)号：US20190181002A1

公开(公告)日：2019-06-13

申请号：US15838428

申请日：2017-12-12

Applicant: ASM IP Holding B.V.

Inventor： Toshiaki Iijima ,  Masaki Tokunaga ,  Jun Kawahara

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/34 ,  C23C16/455

Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

公开(公告)号：US20210225643A1

公开(公告)日：2021-07-22

申请号：US17152592

申请日：2021-01-19

Applicant: ASM IP Holding B.V.

Inventor： Aurélie Kuroda ,  Ryoko Zhang ,  Masaki Tokunaga ,  Ling-Chi Hwang ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/509

Abstract: Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen. The step of pretreating can additionally include a step of exposing the surface to a gas comprising silicon.

公开(公告)号：US09818601B1

公开(公告)日：2017-11-14

申请号：US15278797

申请日：2016-09-28

Applicant: ASM IP Holding B.V.

Inventor： Masaki Tokunaga ,  Masaru Zaitsu ,  Atsuki Fukazawa

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC classification number: H01L21/02274 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228

Abstract: A substrate processing apparatus includes a chamber, a stage provided in the chamber, a shower head in which a plurality of slits are formed, and which is opposed to the stage, an opening/closing part for opening and closing the plurality of slits, a first gas supply part which supplies a gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which is connected to a side wall of the chamber, and which supplies a gas to the space between the stage and the shower head.