公开(公告)号：US20210028021A1

公开(公告)日：2021-01-28

申请号：US17038514

申请日：2020-09-30

Applicant: ASM IP Holding B.V.

Inventor： MOATAZ BELLAH MOUSA ,  Peng-Fu Hsu ,  Ward Johnson ,  Petri Raisanen

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.