-
公开(公告)号:US20230002889A1
公开(公告)日:2023-01-05
申请号:US17850141
申请日:2022-06-27
Applicant: ASM IP Holding B.V.
Inventor: Dieter Pierreux , Werner Knaepen , Arjen Klaver , Lucian Jdira , Marina Mariano , Theodorus G.M. Oosterlaken , Herbert Terhorst , Bert Jongbloed , Subir Parui
Abstract: A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.