公开(公告)号：US20230002889A1

公开(公告)日：2023-01-05

申请号：US17850141

申请日：2022-06-27

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Werner Knaepen ,  Arjen Klaver ,  Lucian Jdira ,  Marina Mariano ,  Theodorus G.M. Oosterlaken ,  Herbert Terhorst ,  Bert Jongbloed ,  Subir Parui

IPC: C23C16/30 ,  C23C16/54 ,  C23C16/52

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.