-
公开(公告)号:US20230002889A1
公开(公告)日:2023-01-05
申请号:US17850141
申请日:2022-06-27
Applicant: ASM IP Holding B.V.
Inventor: Dieter Pierreux , Werner Knaepen , Arjen Klaver , Lucian Jdira , Marina Mariano , Theodorus G.M. Oosterlaken , Herbert Terhorst , Bert Jongbloed , Subir Parui
Abstract: A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.
-
公开(公告)号:US20240420971A1
公开(公告)日:2024-12-19
申请号:US18741168
申请日:2024-06-12
Applicant: ASM IP Holding B.V.
Inventor: Subir Parui , Kelly Houben , Theodorus Oosterlaken , Herbert Terhorst , Bert Jongbloed
IPC: H01L21/67 , H01L21/687
Abstract: A vertical furnace and a method for processing a plurality of substrates in said vertical furnace is disclosed. Embodiments of the presently described vertical furnace comprise a process chamber, a heating element configured to provide the heat to reach the desired process temperature for the processing of the plurality of substrates. The vertical furnace may further comprise heat distributing member for distributing the heat provided by the heating element. Embodiments of the presently described method comprise processing the plurality of substrates in a vertical furnace described herein.
-
公开(公告)号:US20240068097A1
公开(公告)日:2024-02-29
申请号:US18452725
申请日:2023-08-21
Applicant: ASM IP Holding B.V.
Inventor: Subir Parui , Werner Knaepen , Dieter Pierreux , Kelly Houben , Herbert Terhorst , Theodorus G.M. Oosterlaken , Angelos Karagiannis
IPC: C23C16/455 , C23C16/44 , C23C16/458 , C23C16/52
CPC classification number: C23C16/45574 , C23C16/4412 , C23C16/45546 , C23C16/4584 , C23C16/52
Abstract: A substrate processing apparatus configured to from a layer on a plurality of substrates is disclosed. Embodiments of the presently described substrate processing apparatus comprise a process chamber. The process chamber comprises process space for receiving a substrate boat arranged for holding the plurality of substrates. The substrate processing apparatus further comprise a gas delivery assembly comprising at least one gas injector; a gas exhaust assembly comprising two gas outlets. The two gas outlets are positioned at a distance on either side of the at least one gas injector.
-
-