公开(公告)号：US11637011B2

公开(公告)日：2023-04-25

申请号：US17068495

申请日：2020-10-12

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Pei-Chia Chen

IPC: H01L21/02 ,  C23C16/56 ,  H01L21/311 ,  C23C16/34 ,  C23C16/455

Abstract: A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.

公开(公告)号：US20210118667A1

公开(公告)日：2021-04-22

申请号：US17068495

申请日：2020-10-12

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Pei-Chia Chen

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

Abstract: A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.